MMBT5551Q-7 The Diodes Incorporated MMBT5551Q-7 is a 160V NPN small signal bipolar junction transistor in a SOT-23 package. It is designed for low power amplification and switching applications.
Mfr Part #:

MMBT5551Q-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBT5551Q-7 is a 160V NPN small signal bipolar junction transistor in a SOT-23 package. It is designed for low power amplification and switching applications.
Total Stock: 16,020 pcs
$ Price Range: $0.99

MMBT5551Q-7 Available from 1 distributor

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Non-Authorised
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MMBT5551Q-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Electrostatic Discharge (ESD) - Human Body Model
Electrostatic Discharge (ESD) - Machine Model
Emitter-Base Voltage
Frequency
Halogen Free
IC (Maximum @ Absolute Maximum Ratings)
Mounting Type
Operating Temperature
PD (Maximum @ Absolute Maximum Ratings)
Power
Supplier Device Package
TJ, TSTG (@ Absolute Maximum Ratings)
Tape & Reel Quantity
Thermal Resistance Junction-to-Ambient
Transistor Type
VCEO (Maximum @ Absolute Maximum Ratings)
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT5551Q-7 Description

Short technical summary and product information.

The MMBT5551Q-7 from Diodes Incorporated is a 160V NPN bipolar junction transistor (BJT) suitable for automotive applications. It features a high collector-emitter voltage (BVCEO) exceeding 160V and a continuous collector current (IC) of up to 600mA.

 

This transistor is ideal for low power amplification and switching tasks. It comes in a compact SOT-23 surface mount package, making it suitable for space-constrained designs. The device operates within a temperature range of -55°C to +150°C.

 

The MMBT5551Q-7 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, meeting stringent automotive requirements. It is also RoHS compliant and halogen-free.

 

Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 10mA and 5V, and a Vce saturation of 200mV maximum at 5mA and 50mA. The transistor has a frequency response up to 300MHz.

MMBT5551Q-7 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT5551Q-7 NPN Small Signal Bipolar Junction Transistor
Subcategory: Small Signal

MMBT5551Q-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBT5551Q-7 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5551Q-7 Features

  • High voltage NPN bipolar junction transistor.
  • 160V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • Compact SOT-23 surface mount package.
  • AEC-Q101 qualified for automotive use.

MMBT5551Q-7 Applications

  • Ideal for low power amplification.
  • Suitable for switching applications.
  • Designed for automotive applications.
  • Used in space-constrained designs.

MMBT5551Q-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT5551Q-7?

The maximum collector-emitter voltage (VCEO) for the MMBT5551Q-7 is 160V.

What is the continuous collector current rating of the MMBT5551Q-7?

The MMBT5551Q-7 has a continuous collector current (IC) rating of 600mA.

What is the operating temperature range for this transistor?

The operating and storage temperature range for the MMBT5551Q-7 is -55°C to +150°C.

What package type is the MMBT5551Q-7 supplied in?

The MMBT5551Q-7 is supplied in a SOT-23 package.

Is the MMBT5551Q-7 RoHS compliant?

Yes, the MMBT5551Q-7 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT5551Q-7?

The Moisture Sensitivity Level (MSL) for the MMBT5551Q-7 is Level 1.

Is the MMBT5551Q-7 a lead-free component?

Yes, the MMBT5551Q-7 is totally lead-free.

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