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The MMBT5551LT1G from ON Semiconductor is a high-voltage NPN silicon transistor designed for various applications. It features a maximum collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 600mA.
This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 150°C. The device exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a maximum collector-emitter saturation voltage (Vce(sat)) of 200mV at 5mA and 50mA.
Key electrical characteristics include a collector-base voltage (VCBO) of 180V and an emitter-base voltage (VEBO) of 6V. It also boasts a high electrostatic discharge (ESD) rating of over 8000V for the Human Body Model (HBM).
The MMBT5551LT1G is Pb-free and Halogen-free, aligning with environmental compliance standards. It is supplied in tape and reel packaging, with a standard quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT5551LT1G is 160 Vdc.
The MMBT5551LT1G has a continuous collector current rating of 600 mAdc.
The operating temperature range for the MMBT5551LT1G is -55°C to 150°C.
The MMBT5551LT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBT5551LT1G is RoHS3 Compliant.