| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The MMBT5551LT1 is a high-voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for general-purpose applications requiring high voltage handling capabilities.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage (VCEO) of 160 Vdc and a continuous Collector Current (IC) of up to 600 mAdc. The DC Current Gain (hFE) is a minimum of 80 at 10 mAdc. The transistor exhibits a low Collector-Emitter Saturation Voltage (VCE(sat)) of 0.25 Vdc maximum and a Base-Emitter Saturation Voltage (VBE(sat)) of 1.2 Vdc maximum when operating at 10 mAdc.
This device is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to +150°C. The transistor is available in a Pb-Free package and is RoHS3 compliant.
It is supplied on tape and reel, with a standard package quantity of 3000 units, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the MMBT5551LT1 is 600 mAdc.
The Collector-Emitter Breakdown Voltage (VCEO) for the MMBT5551LT1 is 160 Vdc.
The MMBT5551LT1 is supplied in a SOT-23 package.
The operating and storage temperature range for the MMBT5551LT1 is -55°C to +150°C.
The MMBT5551LT1 is RoHS3 compliant.
