| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,304,000 pcs
|
2304000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT5551_NL is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for small signal applications and operates with a collector current of up to 0.6A and a collector-emitter voltage of 160V.
Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 10mA and 5V, and a Vce saturation voltage of 200mV maximum at 5mA and 50mA. The transistor has a frequency response up to 100MHz and a power dissipation of 350mW.
It is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mount applications. The operating temperature range is from -55°C to 150°C (TJ). This transistor is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 150°C (TJ).
The MMBT5551_NL is available in a TO-236-3, SC-59, SOT-23-3 package.
The maximum collector current is 0.6A.
The breakdown voltage is 160V.
The minimum DC Current Gain (hFE) is 80 at 10mA and 5V.