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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Voltage (Maximum) | |
| Collector-Emitter Saturation Voltage (Maximum @ 5 mA, 50 mA) | |
| Collector-Emitter Saturation Voltage (Maximum) | |
| Continuous Collector Current (Maximum) | |
| Current | |
| DC Current Gain (hFE) (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe Min (Minimum @ 10 mA, 5 V) | |
| DC Current Gain Hfe Min (Minimum) | |
| Emitter-Base Voltage (Maximum) | |
| Frequency | |
| Gain-Bandwidth Product | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Power | |
| Power Dissipation (Maximum) | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT5551-7 from Diodes Incorporated is a high voltage NPN bipolar junction transistor (BJT) suitable for low power amplification and switching applications. It offers a collector-emitter voltage (VCEO) of up to 160V and a continuous collector current (IC) of 600mA.
This transistor operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 300mW. It is supplied in a SOT-23-3 surface mount package, making it ideal for space-constrained designs.
The MMBT5551-7 is RoHS 3 compliant and features a halogen and antimony-free "Green" device designation. Its complementary PNP type is the MMBT5401.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT5551-7 is 160V.
The continuous collector current (IC) rating for the MMBT5551-7 is 600mA.
The power dissipation of the MMBT5551-7 transistor is 300mW.
The operating temperature range for the MMBT5551-7 is -55°C to +150°C.
The MMBT5551-7 is supplied in a SOT-23-3 surface mount package.
Yes, the MMBT5551-7 is RoHS 3 compliant.
The Moisture Sensitivity Level (MSL) for the MMBT5551-7 is Level 1.