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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,480,020 pcs
|
1480020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
129,000 pcs
|
129000 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request | |
|
2,986 pcs
|
2986 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
692 pcs
|
692 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Electrostatic Discharge (ESD) - Human Body Model | |
| Electrostatic Discharge (ESD) - Machine Model | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT5551-7-F is an NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for low power amplification and switching applications. It offers a high collector-emitter breakdown voltage (BVCEO) of 160V and can handle a continuous collector current (IC) of up to 600mA.
This transistor is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. It operates within a wide temperature range of -55°C to +150°C. The device also features a DC current gain (hFE) of 80 minimum at 10mA and 5V, and a Vce saturation of 200mV maximum at 5mA and 50mA.
Key electrical characteristics include a frequency response up to 300MHz. The MMBT5551-7-F is designed with environmental considerations, being totally lead-free and RoHS compliant. It is also halogen and antimony-free, designated as a "Green" device. The component is rated for Moisture Sensitivity Level 1 (MSL 1).
Its complementary PNP type is the MMBT5401. The MMBT5551-7-F is ideal for various electronic circuits requiring a reliable NPN transistor with high voltage capabilities in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is 160V.
The maximum continuous collector current (IC) is 600mA.
The operating and storage temperature range is -55°C to +150°C.
The transistor is supplied in a SOT-23-3 package.
Yes, the MMBT5551-7-F is RoHS3 compliant.
The Moisture Sensitivity Level is 1.