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MMBT5551 The MMBT5551 is an NPN bipolar transistor from CJ, designed for high voltage applications. It features a 160V VCEO rating and is housed in a compact SOT-23 package.
Mfr Part #:

MMBT5551

Available from 2 distributors
Mfr Name: CJ
CJ
The MMBT5551 is an NPN bipolar transistor from CJ, designed for high voltage applications. It features a 160V VCEO rating and is housed in a compact SOT-23 package.
✓ Total Stock: 5,197 pcs

MMBT5551 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
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5,053 pcs
On Request
5053 pcs On Request 1 On Request On Request 13+ On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
144 pcs
On Request
144 pcs On Request 1 On Request On Request On Request On Request On Request
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MMBT5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Junction Temperature
Mounting Type
Power Dissipation
SVHC Present
Storage Temperature
Tape & Reel
Thermal Resistance
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MMBT5551 Description

Short technical summary and product information.

The MMBT5551 is a high voltage NPN silicon transistor manufactured by CJ. It is designed for control and signal processing applications, offering a maximum collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 600mA.

 

This transistor comes in a surface-mount SOT-23 package, making it suitable for compact electronic designs. Key electrical characteristics include a DC current gain (hFE) of 250 at 5V CE and 10mA IC, and a gain bandwidth product (ft) of 300 MHz at 10mA IC and 10V CE.

 

With a junction temperature range of -55°C to +150°C and a power dissipation of 0.25W at 25°C ambient, the MMBT5551 is suitable for various industrial applications. It is also noted as being lead-free and halogen-free.

 

Additional specifications include a collector-base voltage (VCBO) of 180V, an emitter-base voltage (VEBO) of 6V, and low cutoff currents (ICBO and IEBO) of 50nA. The device exhibits a collector saturation voltage (VCEsat) of 200mV at 50mA IC and 5mA IB, and a base saturation voltage (VBEsat) of 1V at 10mA IC and 1mA IB.

MMBT5551 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT5551 NPN High Voltage Transistor
Subcategory: NPN

MMBT5551 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBT5551 Features

  • High voltage NPN silicon transistor.
  • 160V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • Compact SOT-23 surface mount package.
  • Lead-free and halogen-free construction.

MMBT5551 Applications

  • Suitable for signal processing.
  • Used in control circuits.
  • Ideal for amplification tasks.
  • Applicable for switching functions.

MMBT5551 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

160 Vdc.

What is the package type?

SOT-23 surface mount.

What is the operating junction temperature range?

-55°C to +150°C.

What is the DC current gain (hFE)?

Minimum 250 at VCE = 5 V, IC = 10 mA.

What is the gain bandwidth product?

300 MHz.

What is the collector saturation voltage?

200 mV at IC = 50 mA, IB = 5 mA.

What is the ESD rating?

>8000 V (Human Body Model).

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