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MMBT5551 The MMBT5551 is an NPN transistor from Jinyu Semiconductor. It features a 160V collector-emitter breakdown voltage and 0.6A continuous collector current, housed in a SOT-23 package.
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MMBT5551

Available from 1 distributors
Mfr Name: Jinyu Semiconductor
Jinyu Semiconductor
The MMBT5551 is an NPN transistor from Jinyu Semiconductor. It features a 160V collector-emitter breakdown voltage and 0.6A continuous collector current, housed in a SOT-23 package.
✓ Total Stock: 1,934 pcs
$ Price Range: $0.77

MMBT5551 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Rayichip ✓
Non-Authorised Inventory information
1,934 pcs
On Request
1934 pcs On Request 1 On Request On Request On Request On Request On Request
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MMBT5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MMBT5551 Description

Short technical summary and product information.

The MMBT5551 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Jinyu Semiconductor. It is designed for various electronic applications requiring signal amplification or switching.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 160V and a maximum continuous collector current of 0.6A. These specifications make it suitable for moderate power applications.

 

The transistor is supplied in a surface-mount SOT-23 package, which is ideal for automated assembly processes and space-constrained designs. The SOT-23 package offers good thermal performance for its size.

 

This component is part of the broader category of discrete semiconductor products, specifically single bipolar junction transistors. Its specifications suggest applications in general-purpose amplification and switching circuits where a reliable NPN transistor is needed.

MMBT5551 Quick Information

Product Type: NPN Transistor
Canonical Name: MMBT5551 NPN Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

MMBT5551 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5551 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5551 Features

  • NPN bipolar junction transistor
  • 160V collector-emitter breakdown voltage
  • 0.6A continuous collector current
  • Surface mount SOT-23 package

MMBT5551 Applications

  • Suitable for switching and amplification circuits.
  • Used in low-voltage, high-speed switching applications.
  • Ideal for signal processing in consumer electronics.
  • Applicable in automotive and industrial control systems.

MMBT5551 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MMBT5551?

The collector-emitter breakdown voltage is 160V.

What is the maximum continuous collector current for the MMBT5551?

The maximum continuous collector current is 0.6A.

What package type is the MMBT5551 supplied in?

The MMBT5551 is supplied in a SOT-23 package.

What is the RoHS status of the MMBT5551?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT5551?

The Moisture Sensitivity Level is 1 Unlimited.

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