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MMBT5551 The Comchip MMBT5551HF is an NPN bipolar transistor in a SOT-23 package. It offers a 160V collector-emitter breakdown voltage and 0.6A collector current.
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MMBT5551

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The Comchip MMBT5551HF is an NPN bipolar transistor in a SOT-23 package. It offers a 160V collector-emitter breakdown voltage and 0.6A collector current.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.42

MMBT5551 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
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MMBT5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MMBT5551 Description

Short technical summary and product information.

The Comchip MMBT5551HF is an NPN bipolar junction transistor (BJT) designed for various electronic applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 160V and a maximum collector current of 0.6A. The transistor is RoHS3 compliant and has an MSL 1 rating, indicating unlimited shelf life under standard conditions.

 

This component is ideal for general-purpose switching and amplification tasks in electronic circuits. Its SOT-23 package allows for easy integration into printed circuit boards using standard surface-mount technology (SMT) assembly processes.

MMBT5551 Quick Information

Product Type: Bipolar Transistor - BJT
Canonical Name: MMBT5551HF NPN Bipolar Transistor
Subcategory: Bipolar Transistor - BJT

MMBT5551 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5551 Estimated Pricing

Qty Low High
1+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5551 Features

  • NPN bipolar transistor type.
  • 160V collector-emitter breakdown voltage.
  • 0.6A maximum collector current.
  • SOT-23 surface-mount package.
  • RoHS3 compliant.

MMBT5551 Applications

  • Suitable for switching and amplification circuits.
  • Used in low-voltage, high-speed switching applications.
  • Ideal for signal processing in consumer electronics.
  • Applicable in automotive and industrial control systems.

MMBT5551 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MMBT5551HF?

The collector-emitter breakdown voltage is 160V.

What is the maximum collector current for the MMBT5551HF?

The maximum collector current is 0.6A.

What type of transistor is the MMBT5551HF?

The MMBT5551HF is an NPN bipolar transistor.

What package is the MMBT5551HF supplied in?

The MMBT5551HF is supplied in a SOT-23 package.

What is the RoHS status of the MMBT5551HF?

The MMBT5551HF is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT5551HF?

The Moisture Sensitivity Level is 1 Unlimited.

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