| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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27,000 pcs
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27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,465 pcs
|
2465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
54 pcs
|
54 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 16 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Voltage |
The MMBT5551 from On Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 surface mount package. This device is rated for a maximum collector-emitter voltage (Vce) of 160V and a continuous collector current (Ic) of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a maximum Vce saturation of 200mV at 5mA and 50mA. The transistor operates at frequencies up to 100MHz and can dissipate up to 350mW of power. Its operating temperature range is from -55°C to 150°C.
The MMBT5551 is suitable for various switching and amplification applications where a small, surface-mountable NPN transistor is required. Its SOT-23-3 package is ideal for automated assembly processes on printed circuit boards.
This component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the MMBT5551 is 160V.
The MMBT5551 has a continuous collector current (Ic) rating of 600mA.
The MMBT5551 transistor operates at frequencies up to 100MHz.
The MMBT5551 is supplied in a SOT-23-3 surface mount package.
The MMBT5551 can operate in a temperature range of -55°C to 150°C.
Yes, the MMBT5551 is RoHS3 compliant.