MMBT5550LT1G The MMBT5550LT1G is an NPN silicon transistor from ON Semiconductor. It offers a 140V collector-emitter voltage and 600mA continuous current in a compact SOT-23-3 package.
Mfr Part #:

MMBT5550LT1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT5550LT1G is an NPN silicon transistor from ON Semiconductor. It offers a 140V collector-emitter voltage and 600mA continuous current in a compact SOT-23-3 package.
✓ Total Stock: 3,197,605 pcs
$ Price Range: $0.99

MMBT5550LT1G Available from 7 distributors

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MMBT5550LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT5550LT1G Description

Short technical summary and product information.

The MMBT5550LT1G is a high-voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring a breakdown voltage of up to 140V and can handle a continuous collector current of 600mA.

 

This transistor features a DC current gain (hFE) of at least 60 at 10mA and 5V, with a Vce saturation of a maximum of 250mV at 5mA and 50mA. The operating temperature range is -55°C to 150°C.

 

Packaged in a surface-mount SOT-23-3 (TO-236) case, the MMBT5550LT1G is suitable for automated assembly processes. It is rated for a total power dissipation of 225 mW on an FR-5 board at 25°C.

 

The device is Pb-free and Halogen-free, compliant with RoHS standards. It also meets Moisture Sensitivity Level 1 (MSL 1) requirements.

MMBT5550LT1G Quick Information

Product Type: NPN Transistor
Series: MMBT5550LT1G
Canonical Name: MMBT5550LT1G NPN Silicon High Voltage Transistor
Subcategory: Single

MMBT5550LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT5550LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5550LT1G Features

  • 140V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • NPN silicon transistor.
  • SOT-23-3 surface mount package.
  • Pb-free and Halogen-free.

MMBT5550LT1G Applications

  • Suitable for high voltage switching.
  • General purpose amplification.
  • Used in power supply circuits.
  • Ideal for signal processing.

MMBT5550LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT5550LT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT5550LT1G is 140 Vdc.

What is the continuous collector current rating of the MMBT5550LT1G?

The MMBT5550LT1G has a continuous collector current rating of 600 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range for the MMBT5550LT1G is -55°C to 150°C.

What package type is the MMBT5550LT1G supplied in?

The MMBT5550LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the MMBT5550LT1G RoHS compliant?

The MMBT5550LT1G is RoHS3 compliant.

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