MMBT5550LT1 The MMBT5550LT1 is an NPN silicon transistor from ON Semiconductor, designed for high voltage applications. It features a 140V collector-emitter voltage and a 600mA continuous collector current.
Mfr Part #:

MMBT5550LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT5550LT1 is an NPN silicon transistor from ON Semiconductor, designed for high voltage applications. It features a 140V collector-emitter voltage and a 600mA continuous collector current.
Total Stock: 2,720 pcs
$ Price Range: $0.99

MMBT5550LT1 Available from 1 distributor

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MMBT5550LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector Current
DC Collector/Base Gain (hFE)
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Emitter-Base Voltage
Halogen Free
Junction and Storage Temperature
Maximum Operating Temperature
Maximum power dissipation
Minimum Operating Temperature
Mounting Style
Pb-Free
Power Dissipation Total (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation Total (Maximum @ FR -5 Board, TA = 25 °C)
Tape & Reel
Voltage Collector Base (Maximum @ MMBT 5550)
Voltage Collector Base (Maximum @ MMBT 5551)
Voltage Collector Emitter (Maximum @ MMBT 5550)
Voltage Collector Emitter (Maximum @ MMBT 5551)

MMBT5550LT1 Description

Short technical summary and product information.

The MMBT5550LT1 is a high voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring robust performance with a maximum collector-emitter voltage (VCEO) of 140V for the MMBT5550 variant and 160V for the MMBT5551 variant. The continuous collector current (IC) is rated at 600mA.

 

This transistor comes in a compact SOT-23 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates within a wide temperature range from -55°C to +150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Key electrical characteristics include a collector-base voltage (VCBO) of up to 180V and an emitter-base voltage (VEBO) of 6.0V. It also offers a minimum DC collector/base gain (hFE) of 60 and a typical collector-emitter saturation voltage of 0.15V. The transistor exhibits good electrostatic discharge protection with a human body model rating greater than 8000V and a machine model rating greater than 400V.

MMBT5550LT1 Quick Information

Product Type: NPN Silicon Transistor
Series: MMBT5550L
Canonical Name: MMBT5550LT1 NPN Silicon High Voltage Transistor
Subcategory: NPN

MMBT5550LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5550LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5550LT1 Features

  • High voltage NPN silicon transistor.
  • 140V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • SOT-23 surface-mount package.
  • RoHS3 compliant and Pb-Free.

MMBT5550LT1 Applications

  • Suitable for high voltage switching.
  • Used in general purpose amplification.
  • Ideal for power supply circuits.
  • Applicable in signal processing.

MMBT5550LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT5550LT1?

The maximum collector-emitter voltage (VCEO) for the MMBT5550LT1 is 140 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is rated at 600 mAdc.

What is the operating temperature range?

The junction and storage temperature range is -55 to +150 °C.

What package type is the MMBT5550LT1 supplied in?

The MMBT5550LT1 is supplied in a SOT-23-3 package.

Is the MMBT5550LT1 RoHS compliant?

Yes, the MMBT5550LT1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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