| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT5550 is an NPN bipolar junction transistor (BJT) from ON Semiconductor, suitable for general purpose high voltage amplification and gas discharge display driver applications. It is designed to operate with a collector-emitter voltage (VCEO) of up to 140V and can handle a continuous collector current (IC) of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 10mA and 5V, and a collector-emitter saturation voltage (VCE(sat)) of 250mV at 5mA and 50mA. The transistor has a typical gain-bandwidth product (fT) of 50MHz.
This device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C.
Applications include general purpose high voltage amplifiers and gas discharge display drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT5550 has a maximum collector-emitter voltage (VCEO) of 140V.
The MMBT5550 can handle a continuous collector current of 600mA.
The MMBT5550 operates within a temperature range of -55°C to 150°C.
The MMBT5550 is supplied in a SOT-23-3 surface mount package.
The MMBT5550 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT5550 is 1.