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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,500 pcs
|
42500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (@ IC = -100 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (@ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (@ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector-Base Cutoff Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Minimum/Maximum @ IC = -10 mAdc, VCE = -10 Vdc) | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Saturation Voltage (Maximum @ IC = 10 mAdc, IB = 1.0 mAdc) | |
| Saturation Voltage (Maximum @ IC = 50 mAdc, IB = 5.0 mAdc) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| gain (Minimum @ IC = -10 mAdc, VCE = -5.0 Vdc) | |
| gain (Minimum @ IC = -50 mAdc, VCE = -5.0 Vdc) | |
| gain (Minimum @ IC = 1.0 mAdc, VCE = 5.0 Vdc) | |
| gain (Minimum @ IC = 10 mA, VCE = 5 V) | |
| gain (Minimum/Maximum @ IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) | |
| voltage (Minimum @ IC = -100 /C 0109 Adc, IE = 0) | |
| voltage (Minimum @ IE = -10 /C 0109 Adc, IC = 0) | |
| voltage (Unspecified condition) |
The MMBT5401WT1G is a high voltage PNP silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring a 150V collector-emitter voltage and can handle a continuous collector current of up to 500mA. The transistor features a gain-bandwidth product of 300MHz and a minimum DC current gain (hFE) of 60 at 10mA and 5V.
This device is packaged in a compact SC-70-3 (SOT323) surface-mount package, making it suitable for space-constrained designs. It operates across a wide temperature range from -55°C to 150°C. The MMBT5401WT1G is Pb-Free and Halogen Free, complying with RoHS standards.
Key electrical characteristics include a collector-emitter saturation voltage of 0.2V at 10mA and 1mA, and 0.5V at 50mA and 5mA. The output capacitance is a maximum of 6pF at 1MHz. This transistor is suitable for various general-purpose amplification and switching applications where high voltage and moderate current are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the MMBT5401WT1G is 150 Vdc.
The continuous collector current (Ic) rating for the MMBT5401WT1G is 500 mAdc.
The gain-bandwidth product (fT) for the MMBT5401WT1G is 300 MHz.
The operating temperature range for the MMBT5401WT1G is -55°C to 150°C.
The MMBT5401WT1G is supplied in a SC-70-3 (SOT323) surface mount package.
Yes, the MMBT5401WT1G is RoHS3 Compliant.