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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
280,000 pcs
|
280000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -100 /C 0109 A, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 A, IC = 0) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VBE = -5 V) | |
| Leakage Current (Maximum @ VCB = -120 V, IE = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage (Maximum) | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board) | |
| Saturation Voltage (Maximum @ IC = -10 mA, IB = -1.0 mA) | |
| Saturation Voltage (Maximum @ IC = -50 mA, IB = -5.0 mA) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| capacitance (Typical/Maximum @ VEB = -3 V, IC = 0, f = 1.0 MHz) | |
| gain (Minimum/Typical @ IC = -1.0 mA, VCE = -5.0 V) | |
| gain (Minimum/Typical @ IC = -10 mA, VCE = -5.0 V) | |
| gain (Minimum/Typical/Maximum @ IC = -50 mA, VCE = -5.0 V) |
The MMBT5401M3T5G is a PNP silicon transistor manufactured by On Semiconductor. It is designed for general purpose amplifier applications and is suitable for low-power surface mount designs where space is limited. This device offers a maximum collector-emitter voltage of 150V and a continuous collector current of 60mA.
The transistor operates within a junction and storage temperature range of -55°C to 150°C. Key electrical characteristics include a typical DC current gain (hFE) of 90 at 10mA and 5V, and a typical gain-bandwidth product (fT) of 180 MHz at 10mA and 5V. The saturation voltage (VCE(sat)) is a maximum of 0.25V at 10mA/1mA and 0.60V at 50mA/5mA.
Packaged in a SOT-723 surface mount case, the MMBT5401M3T5G is supplied on tape and reel in standard quantities of 8000 units. It is Pb-Free and Halogen Free, compliant with RoHS standards. The NSV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
This transistor is ideal for various amplifier circuits and general-purpose switching applications in compact electronic devices. Its small footprint and robust specifications make it a versatile component for modern PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT5401M3T5G is -150 Vdc.
The continuous collector current (IC) rating for the MMBT5401M3T5G is -60 mAdc.
The operating temperature range for the MMBT5401M3T5G is -55°C to 150°C.
The MMBT5401M3T5G is supplied in a SOT-723 surface mount package.
The typical gain-bandwidth product (fT) for the MMBT5401M3T5G is 180 MHz.
Yes, the MMBT5401M3T5G is RoHS3 Compliant.