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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT5401LT1G is a PNP silicon transistor manufactured by ON Semiconductor, designed for high voltage applications. It offers a maximum collector-emitter voltage of 150V and a continuous collector current of 500mA.
This transistor operates within a wide temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. The device also features a typical DC current gain (hFE) of 60 at 10mA and 5V.
Key electrical characteristics include a collector-emitter saturation voltage of up to 0.5V at 50mA and a frequency response up to 300MHz. The transistor is Pb-free and halogen-free, aligning with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -150 Vdc.
The continuous collector current is -500 mAdc.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 (TO-236) surface-mount package.
Yes, it is RoHS3 Compliant.
The typical DC current gain (hFE) is 60 at 10mA, 5V.