| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,600 pcs
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2600 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The MMBT5401-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It is designed for surface mount applications and comes in a compact SOT-23-3 package.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 150V and a maximum continuous collector current of 600mA. The transistor offers a minimum DC current gain (hFE) of 100 at 10mA and 5V. Its Vce saturation is a maximum of 500mV at 5mA and 50mA. The transition frequency is rated at 100MHz.
This component operates within a temperature range of -55°C to 150°C (TJ). The MMBT5401-G is suitable for various general-purpose amplification and switching applications where a PNP transistor is required.
Mounting is achieved via surface mount technology. The package is specified as TO-236-3, SC-59, or SOT-23-3. It is available in Tape & Reel (TR), Cut Tape (CT), or Digi-Reel® formats.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the MMBT5401-G is 600 mA.
The MMBT5401-G has a maximum collector-emitter breakdown voltage of 150 V.
The operating temperature range for the MMBT5401-G is -55°C to 150°C (TJ).
The MMBT5401-G is supplied in a TO-236-3, SC-59, or SOT-23-3 package.
The MMBT5401-G is RoHS3 Compliant.