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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55,020 pcs
|
55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
96 pcs
|
96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Gain-Bandwidth Product | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Pd (Maximum) | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Maximum) |
The MMBT5401-7-F from Diodes Incorporated is a high-voltage PNP bipolar junction transistor (BJT) housed in a compact SOT-23-3 surface-mount package. This device is ideal for low-power amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 150V and a maximum collector current (IC) of 600mA. It offers a typical gain bandwidth product (fT) of 300MHz and a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V collector-emitter voltage. The transistor operates within a temperature range of -55°C to +150°C.
Constructed with epitaxial planar die technology, the MMBT5401-7-F is designed for reliability and is qualified to JEDEC standards. It is also noted as being totally lead-free, fully RoHS 3 compliant, and halogen and antimony-free, making it a 'Green' device. The SOT-23-3 package is suitable for automated assembly processes.
This transistor serves as a complementary NPN type to the MMBT5551. Its specifications make it suitable for various general-purpose amplification and switching tasks in electronic circuits where a high-voltage PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT5401-7-F is 150V.
The maximum continuous collector current (IC) is 600mA.
The operating and storage temperature range is -55°C to +150°C.
The MMBT5401-7-F is supplied in a SOT-23-3 surface-mount package.
Yes, the MMBT5401-7-F is RoHS3 compliant.
Yes, this component is totally lead-free.
No, this is a halogen and antimony-free device.