| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
497 pcs
|
497 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Lead Style | |
| SVHC Present | |
| Tape & Reel |
The MMBT5401 is a PNP general purpose transistor manufactured by MSKSEMI. It features an epitaxial planar die construction and is ideal for medium power amplification and switching applications.
Key electrical characteristics include a collector-emitter breakdown voltage of -150V and a DC current gain (hFE) ranging from 50 to 300 depending on the operating conditions. The collector-emitter saturation voltage is a maximum of -0.5V at -50mA collector current and -5mA base current. The transition frequency (fT) is between 100MHz and 300MHz at -10mA collector current and -10V collector-emitter voltage.
This transistor is supplied in a SOT-23 surface mount package. The total device dissipation is rated at 0.35W at 25°C ambient temperature, with a junction to ambient thermal resistance of 357°C/W. The operating and storage temperature range is from -55°C to +150°C.
The MMBT5401 is also available in a lead-free version. Its complementary NPN type is the MMBT5551.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150 V
50 to 300
100 to 300 MHz
SOT-23
3000
RoHS3 Compliant
1 Unlimited