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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
460,020 pcs
|
460020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,481 pcs
|
4481 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMBT5089LT1G is a versatile NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 package. This device is suitable for various electronic circuits requiring amplification or switching functions.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 50mA. It exhibits a minimum DC current gain (hFE) of 400 at 100µA collector current and 5V collector-emitter voltage. The transistor operates within a wide temperature range of -55°C to 150°C.
Designed for surface mounting, the MMBT5089LT1G is compatible with standard pick-and-place equipment. Its thermal dissipation capability is rated at 300mW at 25°C ambient temperature when mounted on an alumina substrate. The device is Pb-free and halogen-free, aligning with environmental compliance standards.
This transistor is ideal for applications where space is a constraint and reliable performance is required. Its specifications make it suitable for signal amplification, switching, and general-purpose amplification tasks in consumer electronics, industrial controls, and communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT5089LT1G is 25V.
The continuous collector current (IC) rating for the MMBT5089LT1G is 50mA.
The minimum DC current gain (hFE) is 400 at 100µA collector current and 5V collector-emitter voltage.
The operating temperature range for this transistor is -55°C to 150°C.
The MMBT5089LT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBT5089LT1G is RoHS3 compliant.
Yes, this device is Pb-free and halogen-free.