MMBT5089LT1 The MMBT5089LT1 is an NPN bipolar transistor from On Semiconductor. It offers a 25V collector-emitter voltage and 50mA continuous collector current, housed in a compact SOT-23 package.
Mfr Part #:

MMBT5089LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT5089LT1 is an NPN bipolar transistor from On Semiconductor. It offers a 25V collector-emitter voltage and 50mA continuous collector current, housed in a compact SOT-23 package.
Total Stock: 66,000 pcs
$ Price Range: $0.99

MMBT5089LT1 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
66,000 pcs
66000 pcs On Request 1 On Request On Request 01+00 On Request On Request

MMBT5089LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT5089LT1 Description

Short technical summary and product information.

The MMBT5089LT1 is an NPN silicon transistor designed for general-purpose applications. It features a maximum collector-emitter voltage of 25V and a continuous collector current of 50mA. The device exhibits a DC current gain (hFE) of 450 at 1mA and 5V, with a saturation voltage (Vce Sat) of 500mV at 1mA and 10mA.

 

This transistor is supplied in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ). The device is rated for 225 mW power dissipation at 25°C on an FR-5 board.

 

Compliance information indicates RoHS3 compliance, Pb-Free, and Halogen Free status. The MMBT5089LT1 is designed for applications requiring low noise and stable performance within its specified electrical and thermal limits.

MMBT5089LT1 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT5089LT1 NPN Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

MMBT5089LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5089LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5089LT1 Features

  • NPN silicon transistor for general use.
  • 25V collector-emitter voltage rating.
  • 50mA continuous collector current.
  • High DC current gain of 450.
  • Compact SOT-23 surface-mount package.

MMBT5089LT1 Applications

  • Suitable for general amplification circuits.
  • Used in low-power switching applications.
  • Ideal for space-constrained designs.
  • Component in signal processing circuits.

MMBT5089LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT5089LT1?

The maximum collector-emitter voltage (VCEO) for the MMBT5089LT1 is 25 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the MMBT5089LT1 is 50 mAdc.

What is the DC current gain (hFE) of the MMBT5089LT1?

The DC current gain (hFE) is a minimum of 450 at a collector current of 1mA and a collector-emitter voltage of 5V.

What is the operating temperature range?

The operating temperature range for the MMBT5089LT1 is -55°C to 150°C (TJ).

What package type is the MMBT5089LT1 supplied in?

The MMBT5089LT1 is supplied in a SOT-23-3 (TO-236) package.

Is the MMBT5089LT1 RoHS compliant?

Yes, the MMBT5089LT1 is RoHS3 Compliant.

Home
Account

Categories