MMBT5089 The MMBT5089 is an NPN bipolar junction transistor from ON Semiconductor. It offers a 25V collector-emitter voltage and 100mA collector current.
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MMBT5089

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT5089 is an NPN bipolar junction transistor from ON Semiconductor. It offers a 25V collector-emitter voltage and 100mA collector current.
Total Stock: 15,014 pcs
$ Price Range: $0.99

MMBT5089 Available from 2 distributors

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15,000 pcs
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14 pcs
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MMBT5089 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT5089 Description

Short technical summary and product information.

The MMBT5089 is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage of 25V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 400 at 100µA and 5V.

 

This device is housed in a TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for compact electronic designs. It operates within a temperature range of -55°C to 150°C (TJ). The MMBT5089 has a transition frequency of 50MHz and a maximum power dissipation of 350mW.

 

It is specified with a Vce saturation of 500mV at 1mA and 10mA. The component is listed as RoHS3 compliant and has an MSL 1 moisture sensitivity level.

MMBT5089 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: MMBT5089 NPN Transistor
Subcategory: Single

MMBT5089 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5089 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5089 Features

  • NPN bipolar junction transistor.
  • 25V collector-emitter voltage rating.
  • 100mA maximum collector current.
  • High DC current gain (hFE) of 400.
  • Surface mount SOT-23-3 package.

MMBT5089 Applications

  • Used in RF switching circuits
  • Suitable for low-power amplification
  • Ideal for compact electronic designs
  • Applicable in signal processing applications

MMBT5089 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MMBT5089?

The MMBT5089 has a maximum collector-emitter voltage of 25V.

What is the maximum continuous collector current for the MMBT5089?

The maximum continuous collector current for the MMBT5089 is 100 mA.

What is the DC current gain (hFE) of the MMBT5089?

The MMBT5089 has a minimum DC current gain of 400 at 100µA and 5V.

What is the operating temperature range for the MMBT5089?

The MMBT5089 operates between -55°C and 150°C (TJ).

What package type is the MMBT5089 available in?

The MMBT5089 is available in a TO-236-3, SC-59, SOT-23-3 package.

How is the MMBT5089 mounted?

The MMBT5089 is designed for surface mount installation.

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