MMBT5088LT1G The ON Semiconductor MMBT5088LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 30V collector-emitter voltage and a 50mA continuous collector current.
Mfr Part #:

MMBT5088LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT5088LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 30V collector-emitter voltage and a 50mA continuous collector current.
✓ Total Stock: 15,020 pcs
$ Price Range: $0.04

MMBT5088LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT5088LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT5088LT1G Description

Short technical summary and product information.

The MMBT5088LT1G from ON Semiconductor is a single NPN silicon bipolar junction transistor (BJT). It is designed for applications requiring low noise characteristics and offers a collector-emitter voltage of up to 30V and a continuous collector current of 50mA.

 

This transistor features a DC current gain (hFE) of 300 at 100µA and 5V. The saturation voltage (Vce) is a maximum of 500mV at 1mA collector current and 1mA base current. It operates at frequencies up to 50MHz.

 

The MMBT5088LT1G is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C.

 

This device is Pb-Free and Halogen Free, and is RoHS3 compliant. It is supplied in tape and reel packaging with a standard quantity of 3,000 units.

MMBT5088LT1G Quick Information

Product Type: NPN Silicon Transistor
Series: MMBT5088LT1G
Canonical Name: MMBT5088LT1G NPN Silicon Transistor
Subcategory: Single

MMBT5088LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT5088LT1G Estimated Pricing

Qty Low High
1+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5088LT1G Features

  • NPN silicon bipolar junction transistor.
  • 30V collector-emitter voltage rating.
  • 50mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • Operates from -55°C to 150°C.

MMBT5088LT1G Applications

  • Used in low-power switching circuits
  • Suitable for RF and signal amplification
  • Ideal for compact electronic devices
  • Applied in automotive and consumer electronics

MMBT5088LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MMBT5088LT1G?

The collector-emitter voltage for the MMBT5088LT1G is 30 Vdc.

What is the continuous collector current of the MMBT5088LT1G?

The continuous collector current for the MMBT5088LT1G is 50 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range for the MMBT5088LT1G is -55°C to +150°C.

What package type is the MMBT5088LT1G supplied in?

The MMBT5088LT1G is supplied in a SOT-23-3 (TO-236-3, SC-59) surface mount package.

Is the MMBT5088LT1G RoHS compliant?

Yes, the MMBT5088LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT5088LT1G?

The Moisture Sensitivity Level (MSL) for the MMBT5088LT1G is 1.

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