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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT5088 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for surface mount applications and comes in a compact SOT-23-3 package. This transistor offers a maximum collector-emitter voltage of 30V and a continuous collector current of up to 100mA. Its DC current gain (hFE) is a minimum of 350 at 1mA collector current and 5V collector-emitter voltage. The Vce saturation is a maximum of 500mV at 1mA base current and 10mA collector current. With a transition frequency of 50MHz and a power dissipation of 350mW, the MMBT5088 is suitable for various switching and amplification tasks in electronic circuits. The operating temperature range is from -55°C to 150°C (TJ). Its surface mount capability makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MMBT5088 is 30V.
The MMBT5088 can handle a maximum continuous collector current of 100mA.
The DC current gain (hFE) of the MMBT5088 is a minimum of 350 at 1mA collector current and 5V collector-emitter voltage.
The MMBT5088 operates within a temperature range of -55°C to 150°C (TJ).
The MMBT5088 is supplied in a SOT-23-3 package.