MMBT489LT1G The On Semiconductor MMBT489LT1G is an NPN bipolar junction transistor designed for load management in portable applications. It offers a 30V collector-emitter breakdown voltage and 1A continuous collector current.
Mfr Part #:

MMBT489LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT489LT1G is an NPN bipolar junction transistor designed for load management in portable applications. It offers a 30V collector-emitter breakdown voltage and 1A continuous collector current.
Total Stock: 84,500 pcs
$ Price Range: $0.99

MMBT489LT1G Available from 4 distributors

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42000 pcs On Request 1 On Request On Request On Request On Request On Request
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39,000 pcs
39000 pcs On Request 1 On Request On Request 19+18 On Request On Request
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MMBT489LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Breakdown Voltage Collector Emitter (Maximum)
Breakdown Voltage Collector Emitter (Minimum @ IC = 10 mAdc, IB = 0)
Collector Current - Continuous
Collector Current - Peak
Collector-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Current
Current - Collector (Ic) (Max)
Current Collector Cutoff (Maximum @ VCB = 30 Vdc, IE = 0)
Current Collector Cutoff (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Breakdown Voltage
Frequency
Gain DC Current (Minimum @ IC = 0.5 A, VCE = 5.0 V)
Gain DC Current (Minimum @ IC = 1.0 A, VCE = 5.0 V)
Gain DC Current (Minimum @ IC = 50 mA, VCE = 5.0 V)
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Saturation Collector Emitter (Maximum @ IC = 0.1 A, IB = 1.0 mA)
Voltage Saturation Collector Emitter (Maximum @ IC = 0.5 A, IB = 50 mA)
Voltage Saturation Collector Emitter (Maximum @ IC = 1.0 A, IB = 100 mA)

MMBT489LT1G Description

Short technical summary and product information.

The MMBT489LT1G from On Semiconductor is a high-current NPN silicon switching transistor suitable for load management in portable electronic devices. It features a collector-emitter breakdown voltage of 30V and a continuous collector current rating of 1A, with a peak current capability of 2A.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained applications. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 710 mW at 25°C (on a 1.0 x 1.0 inch pad).

 

Key electrical characteristics include a DC current gain (hFE) of up to 300 at 500mA and 5V, and a low collector-emitter saturation voltage of 200mV at 100mA and 1A. The device also has a cutoff frequency of 100MHz.

 

The MMBT489LT1G is Pb-free, Halogen-free/BFR-free, and RoHS compliant, ensuring environmental responsibility in its application.

MMBT489LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: On Semiconductor MMBT489LT1G NPN Switching Transistor
Subcategory: Single

MMBT489LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT489LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT489LT1G Features

  • NPN silicon switching transistor.
  • 30V collector-emitter breakdown voltage.
  • 1A continuous collector current.
  • SOT-23-3 surface mount package.
  • Pb-free and RoHS compliant.

MMBT489LT1G Applications

  • Used in switching power supplies
  • Suitable for signal amplification
  • Ideal for compact electronic circuits
  • Applicable in automotive and industrial electronics

MMBT489LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT489LT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT489LT1G is 30 Vdc.

What is the continuous collector current rating of the MMBT489LT1G?

The MMBT489LT1G has a continuous collector current rating of 1.0 A.

What is the package type for the MMBT489LT1G transistor?

The MMBT489LT1G is supplied in a SOT-23-3 (TO-236) package.

What is the operating temperature range for the MMBT489LT1G?

The operating temperature range for the MMBT489LT1G is -55°C to +150°C (TJ).

Is the MMBT489LT1G RoHS compliant?

Yes, the MMBT489LT1G is RoHS3 Compliant.

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