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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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42,000 pcs
|
42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | 19+18 | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter Turn-On Voltage | |
| Breakdown Voltage Collector Emitter (Maximum) | |
| Breakdown Voltage Collector Emitter (Minimum @ IC = 10 mAdc, IB = 0) | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Cutoff Current | |
| Current | |
| Current - Collector (Ic) (Max) | |
| Current Collector Cutoff (Maximum @ VCB = 30 Vdc, IE = 0) | |
| Current Collector Cutoff (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Gain DC Current (Minimum @ IC = 0.5 A, VCE = 5.0 V) | |
| Gain DC Current (Minimum @ IC = 1.0 A, VCE = 5.0 V) | |
| Gain DC Current (Minimum @ IC = 50 mA, VCE = 5.0 V) | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 0.1 A, IB = 1.0 mA) | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 0.5 A, IB = 50 mA) | |
| Voltage Saturation Collector Emitter (Maximum @ IC = 1.0 A, IB = 100 mA) |
The MMBT489LT1G from On Semiconductor is a high-current NPN silicon switching transistor suitable for load management in portable electronic devices. It features a collector-emitter breakdown voltage of 30V and a continuous collector current rating of 1A, with a peak current capability of 2A.
This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained applications. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 710 mW at 25°C (on a 1.0 x 1.0 inch pad).
Key electrical characteristics include a DC current gain (hFE) of up to 300 at 500mA and 5V, and a low collector-emitter saturation voltage of 200mV at 100mA and 1A. The device also has a cutoff frequency of 100MHz.
The MMBT489LT1G is Pb-free, Halogen-free/BFR-free, and RoHS compliant, ensuring environmental responsibility in its application.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT489LT1G is 30 Vdc.
The MMBT489LT1G has a continuous collector current rating of 1.0 A.
The MMBT489LT1G is supplied in a SOT-23-3 (TO-236) package.
The operating temperature range for the MMBT489LT1G is -55°C to +150°C (TJ).
Yes, the MMBT489LT1G is RoHS3 Compliant.