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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
213,000 pcs
|
213000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25,020 pcs
|
25020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
132 pcs
|
132 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -0.1 mAdc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 0.1 mAdc, IC = 0) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Vbe Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc) | |
| Vbe Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ 50 mA, 500 mA) | |
| Vce Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc) | |
| Vce Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc) | |
| Voltage | |
| capacitance (Maximum @ VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) | |
| capacitance (Maximum @ VCB = -10 Vdc, IE = 0, f = 1.0 MHz) | |
| hFE (Minimum @ IC = -1.0 mAdc, VCE = -1.0 Vdc) | |
| hFE (Minimum @ IC = -10 mAdc, VCE = -1.0 Vdc) | |
| hfe (Maximum @ IC = -500 mAdc, VCE = -2.0 Vdc) | |
| hfe (Minimum @ 150 mA, 2 V) | |
| hfe (Minimum @ IC = -0.1 mAdc, VCE = -1.0 Vdc) | |
| hfe (Minimum @ IC = -150 mAdc, VCE = -2.0 Vdc) |
The MMBT4403WT1G from ON Semiconductor is a PNP silicon bipolar junction transistor (BJT) designed for switching applications. It is housed in a compact SC-70-3 (SOT-323) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage of -40V and a continuous collector current of up to -600mA. The transistor exhibits a DC current gain (hFE) ranging from 30 to 300 depending on the operating conditions. Its gain-bandwidth product is 200MHz, indicating suitability for moderate frequency applications.
Thermal performance is managed with a total device dissipation of 150mW at 25°C ambient temperature, and a junction-to-ambient thermal resistance of 833°C/W. The operating temperature range is -55°C to +150°C.
This device is Pb-free and halogen-free, complying with RoHS standards. It is supplied in tape and reel packaging, with 3000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -40 Vdc.
The continuous collector current is -600 mAdc.
The operating temperature range is -55°C to +150°C.
It is supplied in an SC-70-3 (SOT323) package.
The gain-bandwidth product is 200 MHz.
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.