MMBT4403WT1G The ON Semiconductor MMBT4403WT1G is a PNP Silicon Switching Transistor designed for surface mount applications. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

MMBT4403WT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT4403WT1G is a PNP Silicon Switching Transistor designed for surface mount applications. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Total Stock: 242,152 pcs
$ Price Range: $0.99

MMBT4403WT1G Available from 5 distributors

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Non-Authorised

MMBT4403WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -0.1 mAdc, IE = 0)
Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IE = 0.1 mAdc, IC = 0)
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Lead Spacing
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vbe Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc)
Vbe Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc)
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ 50 mA, 500 mA)
Vce Saturation (Maximum @ IC = -150 mAdc, IB = -15 mAdc)
Vce Saturation (Maximum @ IC = -500 mAdc, IB = -50 mAdc)
Voltage
capacitance (Maximum @ VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz)
capacitance (Maximum @ VCB = -10 Vdc, IE = 0, f = 1.0 MHz)
hFE (Minimum @ IC = -1.0 mAdc, VCE = -1.0 Vdc)
hFE (Minimum @ IC = -10 mAdc, VCE = -1.0 Vdc)
hfe (Maximum @ IC = -500 mAdc, VCE = -2.0 Vdc)
hfe (Minimum @ 150 mA, 2 V)
hfe (Minimum @ IC = -0.1 mAdc, VCE = -1.0 Vdc)
hfe (Minimum @ IC = -150 mAdc, VCE = -2.0 Vdc)

MMBT4403WT1G Description

Short technical summary and product information.

The MMBT4403WT1G from ON Semiconductor is a PNP silicon bipolar junction transistor (BJT) designed for switching applications. It is housed in a compact SC-70-3 (SOT-323) surface mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum collector-emitter voltage of -40V and a continuous collector current of up to -600mA. The transistor exhibits a DC current gain (hFE) ranging from 30 to 300 depending on the operating conditions. Its gain-bandwidth product is 200MHz, indicating suitability for moderate frequency applications.

 

Thermal performance is managed with a total device dissipation of 150mW at 25°C ambient temperature, and a junction-to-ambient thermal resistance of 833°C/W. The operating temperature range is -55°C to +150°C.

 

This device is Pb-free and halogen-free, complying with RoHS standards. It is supplied in tape and reel packaging, with 3000 units per reel.

MMBT4403WT1G Quick Information

Product Type: Transistor
Canonical Name: MMBT4403WT1G PNP Silicon Switching Transistor
Subcategory: Single

MMBT4403WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected

MMBT4403WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4403WT1G Features

  • PNP Silicon Switching Transistor.
  • Surface mount SC-70-3 (SOT323) package.
  • 40V Collector-Emitter Voltage.
  • 600mA Continuous Collector Current.
  • 200MHz Gain-Bandwidth Product.

MMBT4403WT1G Applications

  • Suitable for switching and amplification circuits.
  • Used in low-voltage, high-current applications.
  • Ideal for signal switching in consumer electronics.
  • Applicable in automotive and industrial control systems.

MMBT4403WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT4403WT1G?

The maximum collector-emitter voltage is -40 Vdc.

What is the continuous collector current rating?

The continuous collector current is -600 mAdc.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the MMBT4403WT1G supplied in?

It is supplied in an SC-70-3 (SOT323) package.

What is the gain-bandwidth product?

The gain-bandwidth product is 200 MHz.

Is this transistor RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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