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| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation @ Ib, Ic | |
| Voltage | |
| current (Maximum @ Peak) |
The MMBT4403LT1G is a PNP silicon switching transistor manufactured by ON Semiconductor. It is designed for various switching applications and features a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -600mA.
This transistor operates at a frequency of 200MHz and has a DC current gain (hFE) of 100 minimum at 150mA and 2V. The saturation voltage (Vce) is a maximum of 750mV at 50mA and 500mA.
Packaged in a compact SOT-23-3 (TO-236-3) surface mount package, the MMBT4403LT1G is suitable for applications where space is a constraint. It operates within a junction and storage temperature range of -55°C to +150°C.
The device is Pb-free and Halogen-free, complying with RoHS standards. It is qualified for automotive applications with an S prefix, meeting AEC-Q101 standards and PPAP capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 Vdc
-600 mAdc
200MHz
-55°C ~ 150°C
SOT-23-3 (TO-236)
RoHS3 Compliant