MMBT4403LT1 The On Semiconductor MMBT4403LT1 is a PNP silicon switching transistor. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

MMBT4403LT1

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT4403LT1 is a PNP silicon switching transistor. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Total Stock: 11,223 pcs
$ Price Range: $0.99

MMBT4403LT1 Available from 5 distributors

Authorised
Non-Authorised

MMBT4403LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Pb-Free
Power
Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate)
Supplier Device Package
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Transition Frequency (fT)
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT4403LT1 Description

Short technical summary and product information.

The MMBT4403LT1 from ON Semiconductor is a PNP silicon bipolar junction transistor (BJT) designed for switching applications. It features a maximum collector-emitter voltage of -40V and a continuous collector current of -600mA.

 

With a power dissipation of 225mW on an FR-5 board, this transistor is suitable for various general-purpose switching tasks. It operates within a junction and storage temperature range of -55°C to +150°C.

 

The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs. The S prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 2V, and a transition frequency (fT) of 200MHz. The Vce saturation is a maximum of 750mV at 50mA and 500mA.

MMBT4403LT1 Quick Information

Product Type: PNP Silicon Switching Transistor
Canonical Name: MMBT4403LT1 PNP Silicon Switching Transistor
Subcategory: Bipolar (BJT) - Single

MMBT4403LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT4403LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4403LT1 Features

  • PNP silicon switching transistor.
  • 40V collector-emitter voltage.
  • 600mA continuous collector current.
  • 225mW power dissipation.
  • SOT-23 surface-mount package.

MMBT4403LT1 Applications

  • Used in switching circuits
  • Suitable for signal amplification
  • Ideal for compact electronic devices
  • Applicable in high-speed switching applications

MMBT4403LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the MMBT4403LT1?

The collector-emitter voltage is -40 Vdc.

What is the continuous collector current for the MMBT4403LT1?

The continuous collector current is -600 mAdc.

What is the power dissipation of the MMBT4403LT1?

The power dissipation is 225 mW at 25°C on an FR-5 board.

What is the package type for the MMBT4403LT1?

The package type is SOT-23-3 (TO-236).

Is the MMBT4403LT1 RoHS compliant?

Yes, the MMBT4403LT1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT4403LT1?

The MSL is 1 Unlimited.

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