MMBT4403-7-F The Diodes Incorporated MMBT4403-7-F is a PNP bipolar junction transistor designed for medium power amplification and switching. It comes in a compact SOT-23-3 package.
Mfr Part #:

MMBT4403-7-F

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBT4403-7-F is a PNP bipolar junction transistor designed for medium power amplification and switching. It comes in a compact SOT-23-3 package.
Total Stock: 1,287,396 pcs
$ Price Range: $0.99

MMBT4403-7-F Available from 4 distributors

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MMBT4403-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Operating and Storage Temperature Range
Power
Power Dissipation (Typical/Maximum @ TA = +25 ° C)
Supplier Device Package
Supplier Package
Thermal Resistance (Junction to Leads)
Thermal Resistance - Junction to Case
Thermal Resistance Junction To Ambient (Typical/Maximum @ TA = +25 ° C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT4403-7-F Description

Short technical summary and product information.

The Diodes Incorporated MMBT4403-7-F is a PNP small signal transistor with a collector-emitter voltage of 40V and a continuous collector current of 600mA. It operates at frequencies up to 200MHz and has a DC current gain (hFE) of at least 100 at 150mA and 2V.

 

This transistor is housed in a TO-236-3, SC-59, SOT-23-3 surface mount package. It is suitable for medium power amplification and switching applications. The device features epitaxial planar die construction and is RoHS3 compliant.

 

Key electrical characteristics include a Vce saturation of 750mV maximum at 50mA base current and 500mA collector current. The operating and storage temperature range is from -55°C to +150°C. The power dissipation is rated at 300mW typical and 350mW maximum at 25°C ambient temperature.

MMBT4403-7-F Quick Information

Product Type: PNP Small Signal Transistor
Canonical Name: MMBT4403-7-F PNP Small Signal Transistor
Subcategory: Bipolar (BJT) - Single

MMBT4403-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBT4403-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4403-7-F Features

  • PNP bipolar junction transistor.
  • 40V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • 200MHz operating frequency.
  • SOT-23-3 surface mount package.

MMBT4403-7-F Applications

  • Suitable for medium power switching applications.
  • Used in automotive and industrial circuits.
  • Ideal for signal amplification in low-voltage environments.
  • Applicable in portable electronic devices requiring low power.
  • Suitable for high-speed switching in digital circuits.

MMBT4403-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MMBT4403-7-F?

The collector-emitter voltage is -40V.

What is the continuous collector current of the MMBT4403-7-F?

The continuous collector current is -600mA.

What is the operating temperature range for this transistor?

The operating and storage temperature range is -55°C to +150°C.

What package type is the MMBT4403-7-F supplied in?

The MMBT4403-7-F is supplied in a SOT-23-3 package.

Is the MMBT4403-7-F RoHS compliant?

Yes, the MMBT4403-7-F is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT4403-7-F?

The Moisture Sensitivity Level is 1 Unlimited.

Is this transistor lead-free and halogen-free?

Yes, it is totally lead-free and halogen and antimony free, considered a "Green" device.

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