MMBT4401WT1G The ON Semiconductor MMBT4401WT1G is an NPN silicon switching transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

MMBT4401WT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT4401WT1G is an NPN silicon switching transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
✓ Total Stock: 13,235 pcs
$ Price Range: $0.99

MMBT4401WT1G Available from 3 distributors

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MMBT4401WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT4401WT1G Description

Short technical summary and product information.

The MMBT4401WT1G from ON Semiconductor is a versatile NPN bipolar junction transistor (BJT) housed in an SC-70-3 (SOT-323) surface-mount package. This device is rated for a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA.

 

Key electrical characteristics include a DC current gain (hFE) of at least 100 at 150mA and 1V, and a collector-emitter saturation voltage (VCE(sat)) of a maximum of 0.75V at 500mA and 50mA base current. The transistor exhibits a gain-bandwidth product (fT) of 250MHz, making it suitable for various switching and amplification tasks.

 

Operating across a wide temperature range from -55°C to 150°C, the MMBT4401WT1G is designed for reliability. It features Pb-free and halogen-free construction, aligning with modern environmental standards. The SC-70-3 package is ideal for space-constrained applications where surface-mount technology is employed.

 

This transistor is suitable for a range of electronic circuits requiring a general-purpose NPN switching transistor. Its specifications make it a reliable component for applications demanding moderate current and voltage handling capabilities.

MMBT4401WT1G Quick Information

Product Type: NPN Transistor
Series: MMBT4401WT1
Canonical Name: NPN Silicon Switching Transistor
Subcategory: Single

MMBT4401WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT4401WT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4401WT1G Features

  • NPN silicon switching transistor.
  • 40V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • 250MHz gain-bandwidth product.
  • SC-70-3 surface-mount package.

MMBT4401WT1G Applications

  • Suitable for low-power switching circuits
  • Used in signal amplification applications
  • Ideal for space-constrained electronic devices
  • Applicable in automotive and consumer electronics

MMBT4401WT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT4401WT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT4401WT1G is 40 Vdc.

What is the continuous collector current rating?

The MMBT4401WT1G has a continuous collector current rating of 600 mAdc.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to 150°C.

What is the package type for the MMBT4401WT1G?

The MMBT4401WT1G is supplied in an SC-70-3 (SOT-323) package.

Is the MMBT4401WT1G RoHS compliant?

Yes, the MMBT4401WT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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