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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT4401M3T5G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features an NPN configuration with a maximum collector-emitter voltage of 40V and a maximum collector current of 0.6A. This transistor is designed for switching and amplification in electronic circuits. Its compact SOT723 package allows for surface-mount assembly, making it suitable for space-constrained applications. The device's electrical characteristics make it appropriate for use in low to medium power switching and amplification tasks in various electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
The maximum collector current is 600 mA.