MMBT4401LT1G The MMBT4401LT1G is an NPN bipolar junction transistor from ON Semiconductor. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

MMBT4401LT1G

Available from 13 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT4401LT1G is an NPN bipolar junction transistor from ON Semiconductor. It offers a 40V collector-emitter voltage and 600mA continuous collector current.
✓ Total Stock: 5,200,351 pcs
$ Price Range: $0.99

MMBT4401LT1G Available from 13 distributors

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MMBT4401LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT4401LT1G Description

Short technical summary and product information.

The MMBT4401LT1G is an NPN silicon switching transistor manufactured by ON Semiconductor. It is designed for general-purpose applications requiring a 40V collector-emitter voltage and a continuous collector current of up to 600mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 1V, and a Vce saturation of 750mV at 50mA and 500mA. The transistor operates at frequencies up to 250MHz.

 

This device comes in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C.

 

The MMBT4401LT1G is Pb-free and Halogen-free, adhering to RoHS compliance standards. It is also rated for Moisture Sensitivity Level 1.

MMBT4401LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: MMBT4401LT1G NPN Switching Transistor
Subcategory: Bipolar (BJT) - Single

MMBT4401LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT4401LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4401LT1G Features

  • NPN silicon switching transistor.
  • 40V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • SOT-23-3 surface-mount package.
  • Wide operating temperature range.

MMBT4401LT1G Applications

  • General purpose switching applications.
  • Signal amplification circuits.
  • Power supply control.
  • Consumer electronics devices.

MMBT4401LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT4401LT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT4401LT1G is 40 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBT4401LT1G is 600 mAdc.

What is the minimum DC current gain (hFE) at 150mA and 1V?

The minimum DC current gain (hFE) at 150mA and 1V for the MMBT4401LT1G is 100.

What is the operating temperature range?

The operating temperature range for the MMBT4401LT1G is -55°C to 150°C.

What type of package is the MMBT4401LT1G in?

The MMBT4401LT1G is supplied in a SOT-23-3 (TO-236) package.

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