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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,780 pcs
|
2780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,678 pcs
|
2678 pcs | On Request | 1 | On Request | On Request | 0430+ | On Request | On Request | |
|
850 pcs
|
850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current | |
| Collector Emitter Saturation Voltage (Maximum @ 150 mAdc, 15 mAdc) | |
| Collector Emitter Saturation Voltage (Maximum @ 500 mAdc, 50 mAdc) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Minimum @ 0.1 mAdc, 1.0 Vdc) | |
| DC Current Gain (Minimum @ 1.0 mAdc, 1.0 Vdc) | |
| DC Current Gain (Minimum @ 10 mAdc, 1.0 Vdc) | |
| DC Current Gain (Minimum @ 150 mA, 1 V) | |
| DC Current Gain (Minimum @ 150 mAdc, 1.0 Vdc) | |
| DC Current Gain (Minimum @ 500 mAdc, 2.0 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Pb-Free | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance (Junction to Ambient) (Nominal @ Alumina substrate) | |
| Thermal Resistance (Junction to Ambient) (Nominal @ FR -5 board) | |
| Total Device Dissipation (Nominal @ Alumina Substrate, TA = 25 °C) | |
| Total Device Dissipation (Nominal @ FR -5 Board, TA = 25 °C) | |
| Transistor Type | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMBT4401LT1 is a versatile NPN silicon bipolar junction transistor (BJT) housed in a compact SOT-23 surface-mount package. This device is designed for switching and amplification applications, offering a maximum collector-emitter voltage of 40V and a continuous collector current rating of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 1V, and a transition frequency (fT) of 250MHz. The Vce saturation voltage is specified at a maximum of 750mV at 50mA collector current and 50mA base current.
This transistor is suitable for various electronic circuits requiring reliable switching or signal amplification. Its SOT-23 package is ideal for space-constrained designs on printed circuit boards. The device operates within a junction and storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the MMBT4401LT1 is 40 Vdc.
The continuous collector current for the MMBT4401LT1 is 600 mAdc.
The power dissipation of the MMBT4401LT1 is 225 mW.
The minimum DC current gain (hFE) for the MMBT4401LT1 is 100 at 150mA collector current and 1V Vce.
The transition frequency of the MMBT4401LT1 is 250MHz.
The operating temperature range for the MMBT4401LT1 is -55°C to +150°C.
The MMBT4401LT1 is supplied in a SOT-23-3 (TO-236) package.