MMBT4126LT1G The MMBT4126LT1G is a PNP Silicon general purpose transistor from ON Semiconductor. It is designed for surface mount applications and offers a voltage rating of 25V and a continuous current of 200mA.
Mfr Part #:

MMBT4126LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT4126LT1G is a PNP Silicon general purpose transistor from ON Semiconductor. It is designed for surface mount applications and offers a voltage rating of 25V and a continuous current of 200mA.
Total Stock: 125,640 pcs
$ Price Range: $0.99

MMBT4126LT1G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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125,640 pcs
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MMBT4126LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector - Emitter Saturation Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Input Capacitance
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Supplier Package
Tape & Reel
Tape & Reel Quantity
Thermal Resistance (Typical @ Alumina Substrate)
Thermal Resistance (Typical @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ IC = -50 mAdc, VCE = -1.0 Vdc)
hfe (Minimum @ IC = -2.0 mAdc, VCE = -1.0 Vdc)

MMBT4126LT1G Description

Short technical summary and product information.

The MMBT4126LT1G is a PNP Silicon general purpose transistor manufactured by ON Semiconductor. This component is designed for surface mount applications and comes in a compact SOT-23-3 package.

 

Key electrical characteristics include a collector-emitter voltage of -25V, a continuous collector current of -200mA, and a current-gain bandwidth product (fT) of 250MHz. The transistor exhibits a minimum DC current gain (hFE) of 120 at 2mA and 1V. Saturation voltages are specified at VCE(sat) of -0.4V and VBE(sat) of -0.95V under specific test conditions.

 

Thermal specifications include a total device dissipation of 225mW on an FR-5 board and 300mW on an alumina substrate at 25°C. The operating and storage temperature range is from -55°C to 150°C.

 

This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It has a Moisture Sensitivity Level (MSL) of 1.

MMBT4126LT1G Quick Information

Product Type: Transistor
Series: MMBT4126LT1G
Canonical Name: MMBT4126LT1G PNP Silicon General Purpose Transistor
Subcategory: Single

MMBT4126LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT4126LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT4126LT1G Features

  • PNP Silicon general purpose transistor.
  • Surface mount SOT-23-3 package.
  • 25V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 250MHz gain-bandwidth product.

MMBT4126LT1G Applications

  • Suitable for general purpose amplification.
  • Used in switching applications.
  • Ideal for signal processing circuits.
  • Component in portable electronics.

MMBT4126LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

-25 Vdc

What is the continuous collector current?

-200 mAdc

What is the gain-bandwidth product (fT)?

250 MHz

What is the operating temperature range?

-55°C ~ 150°C

What is the package type?

SOT-23-3 (TO-236)

Is this component RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL)?

1 Unlimited

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