| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000,000 pcs
|
2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,946 pcs
|
2946 pcs | On Request | 1 | On Request | On Request | 1219 | On Request | On Request | |
|
2,891 pcs
|
2891 pcs | On Request | 1 | On Request | On Request | 02+32 | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The MMBT4126 is a PNP bipolar junction transistor (BJT) manufactured by On Semiconductor, suitable for general-purpose amplifier and switching applications. It is designed to operate at collector currents up to 10 µA as a switch and up to 100 mA as an amplifier.
Key electrical specifications include a collector-emitter breakdown voltage of 25V and a continuous collector current rating of 200 mA. The device offers a typical DC current gain (hFE) of 120 at 2mA collector current and 1V VCE. Its transition frequency is 250 MHz, making it suitable for various signal processing tasks.
The MMBT4126 operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 surface mount package, facilitating integration into space-constrained electronic designs. The device's Vce saturation is rated at a maximum of 400mV at 5mA base current and 50mA collector current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MMBT4126 is 25V.
The MMBT4126 has a continuous collector current of 200 mA.
The transition frequency of the MMBT4126 is 250 MHz.
The MMBT4126 operates between -55°C and 150°C.
The MMBT4126 is available in a TO-236-3, SC-59, SOT-23-3 package.
The MMBT4126 is RoHS3 Compliant.