| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,700 pcs
$0.04
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2700 pcs |
$0.04
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
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| Noise Figure | |
| SVHC Present | |
| Tape & Reel |
The MMBT4124 is an NPN silicon epitaxial planar transistor designed for general-purpose amplification and switching applications. Manufactured by YTL, this component is housed in a compact SOT-23 package, making it suitable for surface-mount designs.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 200mA. The device boasts a DC current gain (hFE) ranging from 60 to 360 and a current gain-bandwidth product (fT) of 300MHz at 10mA collector current and 20V VCE. Its collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.3V at 50mA IC and 5mA IB, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 0.95V under the same conditions.
With an operating and storage junction temperature range of -55 to +150°C, the MMBT4124 is designed for robust performance. The thermal resistance from junction to ambient (RθJA) is 200°C/W, and from junction to case (RθJC) is 83.3°C/W. The total device dissipation (PD) is rated at 350mW at 25°C ambient temperature, with a derating of 2.8mW/°C above that temperature.
This transistor is well-suited for applications requiring amplification and switching within its specified limits. Its SOT-23 package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 25V.
The MMBT4124 is housed in a SOT-23 surface-mount package.
The junction temperature range is -55°C to +150°C.
The minimum hFE is 120 at IC=2mA, VCE=1V, and 60 at IC=50mA, VCE=1V.
The typical current gain-bandwidth product (fT) is 300 MHz at IC=10mA, VCE=20V.
The typical input capacitance (Cibo) is 8 pF at VBE=0.5V, IC=0, f=1kHz.
The maximum total device dissipation is 350mW at 25°C ambient.