Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IC = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (Minimum/Maximum @ IC = 50 mA, VCE = 1.0 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Input Capacitance | |
| Leakage Current (Maximum @ V CB = 20 V, IE = 0) | |
| Leakage Current (Maximum @ V EB = 3.0 V, IC = 0) | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Output Capacitance (Maximum @ V CB = 5.0 V, IE = 0, f = 100 kHz) | |
| Power | |
| Small Signal Current Gain (Minimum/Maximum @ V CE = 10 V, IC = 2.0 mA, f = 1.0 kHz) | |
| Supplier Device Package | |
| Supplier Package | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT4124 is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor, suitable for general purpose amplifier and switch applications. It features a collector-emitter voltage of 25V and a continuous collector current of 200mA.
This transistor operates with a DC current gain (hFE) of at least 120 at 2mA collector current and 1V VCE. Its saturation voltage (VCE(sat)) is a maximum of 300mV at 5mA base current and 50mA collector current. The gain-bandwidth product (fT) reaches 300MHz at 10mA collector current and 20V VCE.
Packaged in a surface-mount SOT-23-3 (TO-236-3, SC-59) case, the MMBT4124 is designed for ease of integration into printed circuit boards. It has a total power dissipation of 350mW at 25°C ambient temperature and an operating temperature range of -55°C to 150°C.
Key electrical characteristics include a collector-base breakdown voltage of 30V and an emitter-base breakdown voltage of 5.0V. Leakage currents (ICBO and IEBO) are specified at a maximum of 50nA. The transistor also exhibits small-signal current gain (hfe) between 120 and 480 at 2mA collector current and 10V VCE, with input capacitance (Cibo) at 8pF and output capacitance (Cobo) at 4pF.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT4124 is 25V.
The MMBT4124 has a continuous collector current rating of 200mA.
The minimum DC current gain (hFE) for the MMBT4124 is 120 at 2mA collector current and 1V VCE.
The gain-bandwidth product (fT) of the MMBT4124 is 300MHz at 10mA collector current and 20V VCE.
The MMBT4124 operates between -55°C and 150°C.
The MMBT4124 is available in a surface mount SOT-23-3 package.