| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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956 pcs
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956 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT3960 is an NPN bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. This component is housed in a SOT-23 surface mount package, making it suitable for compact electronic designs.
Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 60V and a continuous collector current (Ic) of 200mA. The DC current gain (hFE) ranges from a minimum of 100 to a maximum of 300 under typical operating conditions (IC = 10 mA, VCE = 5 V). The transistor has a maximum power dissipation of 350mW and operates across a wide temperature range from -55°C to 150°C.
This transistor is ideal for general-purpose amplification and switching applications where a small, surface-mountable NPN transistor is required. Its robust operating temperature range and reliable performance make it a versatile choice for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MMBT3960 is 60V.
The maximum continuous collector current is 200mA.
The DC current gain (hFE) ranges from 100 to 300.
The operating temperature range is -55°C to 150°C.
The MMBT3960 is in a SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.