MMBT3906WT1G The ON Semiconductor MMBT3906WT1G is a PNP bipolar junction transistor designed for general purpose amplifier applications. It features a surface mount SC-70 package.
Mfr Part #:

MMBT3906WT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT3906WT1G is a PNP bipolar junction transistor designed for general purpose amplifier applications. It features a surface mount SC-70 package.
Total Stock: 429,952 pcs
$ Price Range: $0.99

MMBT3906WT1G Available from 6 distributors

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MMBT3906WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous - Maximum
Collector Emitter Breakdown Voltage (Maximum)
Collector Emitter Breakdown Voltage (Minimum @ IC = -1.0 mAdc, IB = 0)
Collector Emitter Voltage (Maximum)
Collector-Base Voltage (Maximum)
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (Maximum)
Frequency
Frequency - Transition
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Power - Max
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT3906WT1G Description

Short technical summary and product information.

The MMBT3906WT1G from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for general-purpose amplifier applications. It is housed in a compact SC-70 (SOT-323) surface-mount package, making it ideal for low-power applications where space is a constraint.

 

Key electrical characteristics include a continuous collector current of up to 200 mA and a collector-emitter voltage of up to -40V. The transistor offers a DC current gain (hFE) of at least 100 at 10mA and 1V, and a transition frequency of 250 MHz. The maximum power dissipation is rated at 150 mW at 25°C ambient temperature.

 

This device operates within a temperature range of -55°C to +150°C. It is Pb-free and Halogen-free, complying with RoHS standards. The SC-70-3 package is supplied in tape and reel format for automated assembly processes.

MMBT3906WT1G Quick Information

Product Type: PNP Transistor
Series: MMBT3906WT1G
Canonical Name: MMBT3906WT1G PNP Transistor
Subcategory: Single

MMBT3906WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT3906WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3906WT1G Features

  • PNP bipolar junction transistor for amplifiers.
  • Compact SC-70 (SOT-323) surface-mount package.
  • Rated for -40V collector-emitter voltage.
  • Handles up to 200mA continuous collector current.
  • Operates at frequencies up to 250MHz.

MMBT3906WT1G Applications

  • Suitable for general purpose amplification.
  • Ideal for low-power circuit designs.
  • Used in space-constrained applications.
  • Component in signal processing circuits.

MMBT3906WT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MMBT3906WT1G?

The maximum continuous collector current for the MMBT3906WT1G is 200 mA.

What is the collector-emitter voltage rating of the MMBT3906WT1G?

The MMBT3906WT1G has a collector-emitter voltage rating of -40 V.

What is the operating temperature range for the MMBT3906WT1G?

The operating temperature range for the MMBT3906WT1G is -55°C to +150°C.

What package type is the MMBT3906WT1G available in?

The MMBT3906WT1G is available in an SC-70, SOT-323 package.

Is the MMBT3906WT1G RoHS compliant?

Yes, the MMBT3906WT1G is RoHS3 compliant.

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