MMBT3906Q-7-F The Diodes Incorporated MMBT3906Q-7-F is a PNP bipolar transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications.
Mfr Part #:

MMBT3906Q-7-F

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBT3906Q-7-F is a PNP bipolar transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications.
Total Stock: 313,020 pcs
$ Price Range: $0.99

MMBT3906Q-7-F Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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MMBT3906Q-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Frequency
Halogen Free
Mounting Type
Operating Temperature
Operating and Storage Temperature Range
Power
Supplier Device Package
Thermal Resistance (Nominal @ Junction to Leads)
Thermal Resistance (Nominal @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

MMBT3906Q-7-F Description

Short technical summary and product information.

The MMBT3906Q-7-F from Diodes Incorporated is a PNP epitaxial planar die construction transistor. It is designed for medium power amplification and switching applications. This device features a collector-emitter voltage of 40V and a continuous collector current of 200mA.

 

The transistor is housed in a SOT-23-3 package, suitable for surface mount applications. It operates within a temperature range of -55°C to 150°C. The MMBT3906Q-7-F is qualified to AEC-Q101 standards for high reliability and is PPAP capable, making it suitable for automotive applications.

 

Key electrical characteristics include a DC current gain (hFE) of 100 minimum at 10mA and 1V, and a Vce saturation of 400mV maximum at 5mA and 50mA. The device has a frequency response up to 250MHz.

 

This component is RoHS3 compliant, lead-free, and halogen-free, aligning with environmental standards. Its moisture sensitivity level is 1.

MMBT3906Q-7-F Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT3906Q-7-F PNP Small Signal Transistor
Subcategory: Single

MMBT3906Q-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

MMBT3906Q-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3906Q-7-F Features

  • PNP bipolar transistor for amplification.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • SOT-23-3 surface mount package.
  • AEC-Q101 qualified for high reliability.

MMBT3906Q-7-F Applications

  • Ideal for medium power amplification.
  • Suitable for switching applications.
  • Used in automotive systems.
  • General purpose transistor applications.

MMBT3906Q-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the MMBT3906Q-7-F?

The operating and storage temperature range is -55°C to 150°C.

What package type is the MMBT3906Q-7-F available in?

The MMBT3906Q-7-F is available in a SOT-23-3 package.

What is the RoHS status of the MMBT3906Q-7-F?

The MMBT3906Q-7-F is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT3906Q-7-F?

The Moisture Sensitivity Level (MSL) is 1.

What is the collector-emitter voltage for the MMBT3906Q-7-F?

The collector-emitter voltage is 40V.

What is the continuous collector current for the MMBT3906Q-7-F?

The continuous collector current is 200mA.

What is the DC current gain (hFE) of the MMBT3906Q-7-F?

The DC current gain (hFE) is a minimum of 100 at 10mA collector current and 1V collector-emitter voltage.

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