MMBT3906LT3G The On Semiconductor MMBT3906LT3G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT3906LT3G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT3906LT3G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 111,165 pcs
$ Price Range: $0.99

MMBT3906LT3G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100,000 pcs
100000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
9,470 pcs
9470 pcs On Request 1 On Request On Request On Request On Request On Request
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1,695 pcs
1695 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT3906LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT3906LT3G Description

Short technical summary and product information.

The MMBT3906LT3G from ON Semiconductor is a PNP silicon transistor suitable for various general-purpose applications. It features a maximum collector-emitter voltage of -40Vdc and a continuous collector current of -200mAdc.

 

This device is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs. The transistor offers a DC current gain (hFE) of at least 100 at 10mA and 1V, with a frequency rating of 250MHz.

 

Key electrical characteristics include a Vce saturation voltage of 400mV at 5mA/50mA and breakdown voltages of -40Vdc for collector-emitter and collector-base, and -5.0Vdc for emitter-base. The operating temperature range is -55°C to 150°C.

 

The MMBT3906LT3G is Pb-free and Halogen-free, complying with RoHS standards. It is available in tape and reel packaging, with standard quantities of 3,000 or 10,000 units per reel.

MMBT3906LT3G Quick Information

Product Type: PNP Transistor
Canonical Name: MMBT3906LT3G PNP General Purpose Transistor
Subcategory: Single PNP

MMBT3906LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT3906LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3906LT3G Features

  • PNP silicon general purpose transistor.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • SOT-23-3 surface mount package.
  • Pb-free and Halogen-free.

MMBT3906LT3G Applications

  • Suitable for general purpose amplification.
  • Used in switching applications.
  • Ideal for small signal circuitry.
  • Compact surface mount designs.

MMBT3906LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MMBT3906LT3G?

The collector-emitter voltage for the MMBT3906LT3G is -40 Vdc.

What is the continuous collector current of the MMBT3906LT3G?

The continuous collector current for the MMBT3906LT3G is -200 mAdc.

What is the package type for the MMBT3906LT3G?

The MMBT3906LT3G is available in a SOT-23-3 (TO-236) package.

What is the operating temperature range for the MMBT3906LT3G?

The operating temperature range for the MMBT3906LT3G is -55°C to 150°C.

Is the MMBT3906LT3G RoHS compliant?

The MMBT3906LT3G is RoHS3 Compliant.

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