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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450,000 pcs
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450000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MMBT3906LT1H is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs.
This transistor features a maximum voltage rating of 40V and can handle continuous currents up to 200mA. Its power dissipation is rated at 225 mW. The DC current gain (hFE) is a minimum of 100 at 10mA collector current and 1V collector-emitter voltage. The Vce saturation is a maximum of 400mV at 5mA base current and 50mA collector current.
With an operating temperature range of -55°C to 150°C (TJ), the MMBT3906LT1H is designed for reliable performance in demanding environments. Its transition frequency is 250MHz, indicating suitability for moderate-frequency applications. The RoHS 3 compliance status suggests adherence to environmental regulations.
This component is supplied in Cut Tape packaging and is designed for surface mounting. The factory pack quantity is 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT3906LT1H transistor has a voltage rating of 40V.
The MMBT3906LT1H can handle a maximum continuous current of 200mA.
The power dissipation for the MMBT3906LT1H is 225 mW.
The MMBT3906LT1H operates in a temperature range of -55°C to 150°C (TJ).
The MMBT3906LT1H is a PNP bipolar transistor.
The MMBT3906LT1H is supplied in a SOT-23-3 (TO-236) surface-mount package.