| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,525 pcs
|
2525 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| Input Impedance | |
| Lead Spacing | |
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| SVHC Present | |
| Tape & Reel |
The MMBT3906LT1 is a PNP Silicon General Purpose Transistor manufactured by Infineon. It is designed for a wide range of electronic applications requiring reliable amplification and switching.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -40V, a Collector-Base Voltage (VCBO) of -40V, and an Emitter-Base Voltage (VEBO) of -5.0V. The continuous collector current (IC) is rated at -200 mAdc. The DC Current Gain (HFE) varies depending on the operating conditions, with minimum values ranging from 30 to 100 and a typical maximum of 300.
This transistor operates within a junction and storage temperature range of -55 to +150°C. It is supplied in a compact SOT-23 surface-mount package, typically on tape and reel with 3000 units per reel. The device is also noted as being Pb-Free.
With its robust specifications and common package type, the MMBT3906LT1 is suitable for various general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 Vdc
-200 mAdc
SOT-23
3000 / Tape & Reel
-55 to +150 °C
250 MHz
RoHS3 Compliant