| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,250 pcs
|
1250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The MMBT3906LT1 is a PNP silicon transistor designed for general-purpose applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The device exhibits a minimum DC current gain (HFE) ranging from 30 to 100 depending on the operating conditions. Its current-gain bandwidth product (fT) is 250 MHz, indicating good high-frequency performance.
Thermal specifications include a total device dissipation of 225mW on an FR-5 board and 300mW on an alumina substrate at 25°C. The junction and storage temperature range is -55°C to +150°C.
This transistor is suitable for various switching and amplification tasks in electronic circuits. Its Pb-free packaging aligns with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -40V.
The MMBT3906LT1 is offered in a surface-mount SOT-23 package.
The junction and storage temperature range is -55°C to +150°C.
The DC current gain (hFE) ranges from 60 to 100, with a minimum of 100 at IC=-10mA and VCE=-1V.
The current-gain bandwidth product (fT) is 250 MHz minimum.
The collector-emitter saturation voltage is -0.25V at IC=-10mA and -0.4V at IC=-50mA.
The total device dissipation is 225mW on FR-5 board and 300mW on alumina substrate at 25°C.
