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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,375 pcs
|
1375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (Maximum @ IC = -10 mA, IB = -1.0 mA) | |
| Base Emitter Saturation Voltage (Maximum @ IC = -50 mA, IB = -5.0 mA) | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=1.0 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Collector Cut-Off Current | |
| Collector Emitter Saturation Voltage (Maximum @ IB = 5 mA, IC = 50 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = -50 mA, IB = -5.0 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ Ic=10 mA, Ib=1 mA) | |
| Continuous Collector Current | |
| Continuous Collector Current (Maximum) | |
| Current | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -0.1 mA) | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -1 mA) | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -10 mA) | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -100 mA) | |
| DC Current Gain (Minimum @ VCE = -1 V, IC = -50 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Minimum @ IC = -10 mA, VCE = -20 V) | |
| Lead Style | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum) | |
| Supplier Device Package | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT3906K is a PNP epitaxial silicon transistor manufactured by ON Semiconductor. It is suitable for general-purpose applications and offers a collector-emitter voltage of up to 40V and a continuous collector current of 200mA. The device has a power dissipation rating of 350mW.
Key electrical characteristics include a DC current gain (hFE) of up to 100 at 10mA, 1V, and a gain-bandwidth product (fT) of 250MHz. The transistor also features a collector-emitter saturation voltage of 400mV at 5mA, 50mA and a base-emitter saturation voltage of up to 850mV at 10mA, 1mA.
This transistor is housed in a compact SOT-23-3 surface-mount package, making it ideal for space-constrained designs. The operating temperature range is from -55°C to 150°C.
The MMBT3906K is a reliable component for various electronic circuits requiring PNP amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 40V.
The continuous collector current is 200mA.
The power dissipation is 350mW.
The operating temperature range is -55°C to 150°C.
The MMBT3906K is available in a SOT-23-3 package.
The MMBT3906K is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.