| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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135,000 pcs
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135000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Tape & Reel | |
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The MMBT3906FA-7B from Diodes Incorporated is a PNP bipolar junction transistor (BJT) suitable for small signal applications. It features a collector-emitter breakdown voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA.
This transistor has a power dissipation rating of 435mW and a transition frequency (fT) of 300MHz. The DC current gain (hFE) is a minimum of 100 at 10mA and 1V. Saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA collector current and 50mA base current.
The device is housed in a compact X2-DFN0806-3 surface-mount package, measuring only 0.48mm x 0.6mm with a height of 0.4mm, making it significantly smaller than SOT23 packages. This small footprint and low profile are ideal for space-constrained designs.
Qualified to AEC-Q101 standards for high reliability, the MMBT3906FA-7B is also RoHS compliant, lead-free, and halogen-free, aligning with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is -40V.
The maximum continuous collector current is -200mA.
The power dissipation is 435mW at +25°C ambient temperature.
The operating temperature range is -55°C to +150°C.
The package type is X2-DFN0806-3.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.