MMBT3906 The MMBT3906 is a PNP bipolar transistor from ON Semiconductor designed for general-purpose switching applications. It offers a 40V collector-emitter voltage and a 200mA collector current.
Mfr Part #:

MMBT3906

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT3906 is a PNP bipolar transistor from ON Semiconductor designed for general-purpose switching applications. It offers a 40V collector-emitter voltage and a 200mA collector current.
Total Stock: 65,672 pcs
$ Price Range: $0.06

MMBT3906 Available from 6 distributors

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41,921 pcs
41921 pcs On Request 1 On Request On Request 2010+ On Request On Request
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12,100 pcs
12100 pcs On Request 1 On Request On Request 18+ On Request On Request
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6,000 pcs
6000 pcs On Request 1 On Request On Request N/A On Request On Request
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
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2,647 pcs
2647 pcs On Request 1 On Request On Request On Request On Request On Request
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4 pcs
$0.06
Qty Price
0+ 0.06
4 pcs $0.06
QtyPrice
0+ 0.06
1 On Request On Request On Request On Request On Request

MMBT3906 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC=-1 mA, IB=0)
Breakdown Voltage (Minimum @ IC=-10 uA, IE=0)
Breakdown Voltage (Minimum @ IE=-10 uA, IC=0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency (Nominal)
Leakage Current (Maximum @ VCE=-30 V, VEB=-3 V)
Max Power Dissipation
Mounting Type
Operating Junction Temperature and Storage Temperature Range
Operating Temperature
Power
Saturation Voltage (Maximum @ 5 mA, 50 mA)
Saturation Voltage (Maximum @ IC=-10 mA, IB=-1 mA)
Saturation Voltage (Maximum @ IC=-50 mA, IB=-5 mA)
Supplier Device Package
Supplier Package
Switching Time (Maximum @ VCC =-3 V,V BE =-0.5 V, IC=-10 mA,I B=-1 mA)
Switching Time (Maximum @ VCC=-3 V,IC=-10 mA, IB 1=IB 2=-1 mA)
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum
capacitance (Maximum @ VCB=-5 V , IE=0, f=1 MHz)
capacitance (Maximum @ VEB=-0.5 V , IC=0, f=1 MHz)
gain (Minimum @ 10 mA, 1 V)
gain (Minimum @ IC=-1 mA, VCE=-1 V)
gain (Minimum @ IC=-10 mA, VCE=-1 V)
gain (Minimum @ IC=-100 mA, VCE=-1 V)
gain (Minimum @ IC=-50 mA, VCE=-1 V)
voltage (Maximum @ IC = 0)
voltage (Maximum @ IE=0)

MMBT3906 Description

Short technical summary and product information.

The MMBT3906 is a PNP epitaxial silicon planar design transistor from ON Semiconductor, suitable for general-purpose switching applications. It features a collector-emitter voltage of -40V and a continuous collector current of -200mA.

 

With a maximum power dissipation of 330mW and a thermal resistance of 375°C/W, this transistor is designed for operation within a temperature range of -55°C to 150°C. The DC current gain (hFE) is a minimum of 100 at 10mA and 1V.

 

Packaged in a SOT-23-3 surface mount case, the MMBT3906 is compatible with standard soldering processes. Its electrical characteristics include a frequency bandwidth product of 250MHz and various switching times like delay, rise, storage, and fall times, making it a versatile component for electronic circuits.

MMBT3906 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT3906 PNP General Purpose Switching Transistor
Subcategory: PNP

MMBT3906 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT3906 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3906 Features

  • PNP bipolar transistor for general switching.
  • Collector-emitter voltage rated at -40V.
  • Continuous collector current up to -200mA.
  • Surface mount SOT-23-3 package.
  • Operating temperature range from -55°C to 150°C.

MMBT3906 Applications

  • Suitable for general-purpose switching.
  • Used in low-power electronic circuits.
  • Ideal for signal amplification tasks.
  • Component in discrete logic circuits.

MMBT3906 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT3906?

The maximum collector-emitter voltage for the MMBT3906 is -40V.

What is the continuous collector current rating of the MMBT3906?

The MMBT3906 has a continuous collector current rating of -200mA.

What is the operating temperature range for the MMBT3906 transistor?

The MMBT3906 transistor operates between -55°C and 150°C.

What package type is the MMBT3906 supplied in?

The MMBT3906 is supplied in a SOT-23-3 package.

What is the DC Current Gain (hFE) of the MMBT3906 at 10mA and 1V?

The minimum DC Current Gain (hFE) for the MMBT3906 at 10mA and 1V is 100.

What is the saturation voltage (Vce(sat)) for the MMBT3906 at 5mA and 50mA?

The maximum saturation voltage (Vce(sat)) for the MMBT3906 at 5mA and 50mA is -0.25V.

What is the bandwidth product (fT) of the MMBT3906?

The current gain-bandwidth product (fT) for the MMBT3906 is 250MHz.

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