| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The MMBT3906 is a PNP epitaxial silicon planar transistor designed for general purpose switching applications. It features a collector-emitter voltage of -40V and a continuous collector current of -200mA.
Key electrical characteristics include a DC current gain (hFE) of up to 100 at 10mA and 1V, and a maximum collector-emitter saturation voltage of 400mV at 5mA/50mA. The transistor operates over a wide temperature range from -55°C to 150°C.
Packaged in a compact SOT-23-3 (TO-236-3) surface mount case, the MMBT3906 is suitable for various electronic circuits where space is a consideration. Its lead-free and RoHS 3 compliant status makes it suitable for modern electronic designs.
This transistor is ideal for applications requiring a reliable PNP switching element with moderate current and voltage handling capabilities. Its performance characteristics, such as switching times and gain-bandwidth product, make it versatile for signal amplification and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the MMBT3906 is -40V.
The MMBT3906 has a continuous collector current of -200mA.
The operating temperature range for the MMBT3906 is -55°C to 150°C.
The MMBT3906 is supplied in a SOT-23-3 package.
The MMBT3906 is RoHS 3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT3906 is 1 Unlimited.
The typical DC current gain (hFE) of the MMBT3906 at 10mA and 1V is 100.