| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300,000 pcs
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300000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT3906 is a PNP epitaxial silicon planar design transistor from Yangzhou Yangjie Electronic Technology Co.,Ltd. It is suitable for general purpose switching applications and features a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA.
With a maximum power dissipation of 330mW, this transistor is housed in a SOT-23 package, making it ideal for surface mount applications. The operating temperature range is -55°C to 150°C (TJ).
Key electrical characteristics include a DC current gain (hFE) of up to 100 at 10mA and 1V, and a collector-emitter saturation voltage (VCE(SAT)) of -0.4V at 10mA and -1mA. The gain-bandwidth product (fT) is 250MHz at 10mA and -20V.
This component is lead-free and compliant with EU RoHS 2.0 standards, utilizing a green molding compound. It is supplied in a SOT-23-3 package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT3906 is -40V.
The MMBT3906 has a continuous collector current (IC) rating of -200mA.
The MMBT3906 has a maximum power dissipation of 330mW.
The MMBT3906 can operate in a temperature range of -55°C to 150°C.
The MMBT3906 is supplied in a SOT-23 package.