| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32,333 pcs
|
32333 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The MMBT3906 is a PNP epitaxial silicon planar transistor from STMicroelectronics, suitable for general purpose switching applications. It features a maximum collector-emitter voltage of -40V and a continuous collector current of -200mA.
With a maximum power dissipation of 330mW and a thermal resistance of 375°C/W, this transistor is designed for moderate power applications. The operating junction and storage temperature range is from -55°C to 150°C.
Key electrical characteristics include a DC current gain (hFE) of up to 100 at 10mA and 1V, and a collector-emitter saturation voltage (VCE(SAT)) of 400mV at 5mA and 50mA. The gain-bandwidth product (fT) is 250MHz at 10mA and -20V.
Packaged in a SOT-23-3 surface mount case, the MMBT3906 is designed for easy integration into printed circuit boards. It is lead-free and compliant with EU RoHS 2.0 standards, utilizing a green molding compound.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT3906 is -40V.
The MMBT3906 has a continuous collector current (IC) rating of -200mA.
The MMBT3906 is available in a SOT-23-3 surface mount package.
The MMBT3906 can operate in a temperature range of -55°C to 150°C (TJ).
Yes, the MMBT3906 is RoHS 3 compliant.